9n50c datasheet 2n3904

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2N3904 Transistor and Specifications. 2N3904 Datasheet. 2N3904 Circuits. The 2N3904 is common general-purpose low-power NPN transistor used amplifying or switching applications. It is typically used for low-current, medium voltage, and moderate speed purposes. 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 AUK Corp catalog First Page, datasheet, datasheet search, data sheet, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, semiconductors
 

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FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description FQPF9N50C — N-Channel QFET ® MOSFET ©2003 Fairchild Semiconductor Corporation FQPF9N50C Rev. C0 1 www.fairchildsemi.com These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced 2N3904 - 2N3904 Datasheet - NPN General Purpose Amplifier 2N3563 - 2N3563 Datasheet - NPN Epoxy - RF / IF Oscillator 2N2222 - 2N2222 Datasheet - Bipolar NPN Device 2761I-A - 2761I-A Datasheet - 650V, 10A, Nch, MOSFET 1N5822 - 1N5822 Datasheet - 3.0 Ampere Schottky Barrier Rectifiers 1N540 - 1N540 Datasheet - Diode Switching 400V 3A 2-Pin SOD-64 ... Nov 30, 2015 · The main difference is in Ft; typically 1100MHz for the SS9018 and 300MHz for the 2N3904. There are different rules-of-thumb for amplifiers; one says that Ft should be five times the required upper frequency. On that basis the 2N3904 is suitable for up to about 60MHz whilst the SS9018 will serve at over 200MHz. Buy 9N50C FAIRCHILD , Learn more about 9N50C N-Channel QFET MOSFET / 500 V, 9 A, 800 mOhm / D2-PAK Package , View the manufacturer, and stock, and datasheet pdf for the 9N50C at Jotrin Electronics. 2N3904 General Purpose Transistors NPN TO-92 Page 1 12/05/08 V1.1 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted *
 

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2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 2N3904 datasheet, 2N3904 datasheets, 2N3904 pdf, 2N3904 circuit : ONSEMI - General Purpose Transistors(NPN Silicon) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 2N3391 Datasheet (PDF) 1.1. 2n3390 2n3391 2n3391a 2n3392 2n3393.pdf Size:296K _fairchild_semi. Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Catalog Datasheet MFG & Type PDF Document Tags; 2004 - TRANSISTOR 2N3904. Abstract: 2N3904 NPN Transistor 2n3904 specification 2n3904 npn 2N3904 plastic high gain low voltage PNP transistor TO-92 2n3904 philips power electronic handbook 2N3904 equivalent DATA TRANSISTOR

Nov 30, 2015 · The main difference is in Ft; typically 1100MHz for the SS9018 and 300MHz for the 2N3904. There are different rules-of-thumb for amplifiers; one says that Ft should be five times the required upper frequency. On that basis the 2N3904 is suitable for up to about 60MHz whilst the SS9018 will serve at over 200MHz. 2N3905 Datasheet (PDF) 1.1. 2n3905 2n3906.pdf Size:199K _motorola. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 ...

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FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description FQPF9N50C — N-Channel QFET ® MOSFET ©2003 Fairchild Semiconductor Corporation FQPF9N50C Rev. C0 1 www.fairchildsemi.com These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced KHB9D0N50F datasheet, ... transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet khb*2D0N60P KIA7812API ... 9n50c IGBT 20N50 kmb ...