2907a datasheet 1n4001

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 1N4001 . Features. Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge capability High temperature soldering guaranteed: Adafruit Industries, Unique & fun DIY electronics and kits 1N4001 Diode - 10 pack ID: 755 - This here is a 10 pack of the classic 1N4001 power blocking diode. These are good for reverse polarity protection (put it between your DC power jack and circuitry to avoid a negative-voltage that would zap your delicate electronics), kickback protection ... Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product.
 

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All the part names for which the file 1N4004-TB.pdf is a datasheet
 

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PARAMETER TEST CONDITIONS SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT Maximum instantaneous forward voltage 1.0 A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 5.0 μA TA = 125 °C 50 Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Rochester Electronics is the world's most trusted solution for end of life semiconductors. Search our large inventory of semiconductors and buy now.

NXP Semiconductors Product data sheet PNP switching transistor PN2907A DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 2N2907A Small Signal Switching Transistor PNP Silicon Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −60 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc 1N4001-1N4007 Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Maximum Ratings and Electrical Characteristics @ Ta = 25 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRMS DC Blocking ...

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i think the main difference is the diode capacitance. not critical if youre just using it for linear 60hz-ish rectification but for high frequency, high powered, high efficiency applications sometimes the high voltage diodes in a series have slightly higher capacitance, higher reverse current, slower reverse recovery and sometimes higher forward voltage drop. i think the main difference is the diode capacitance. not critical if youre just using it for linear 60hz-ish rectification but for high frequency, high powered, high efficiency applications sometimes the high voltage diodes in a series have slightly higher capacitance, higher reverse current, slower reverse recovery and sometimes higher forward voltage drop.