2sa1023 transistor datasheet

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Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage 2SA1023 NTE Equvilent Transistor PNP Silicon 100v Ic=0.5a To-92 Case Audio Power Amp Compl To NTE289a . Data Sheet : NTE Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications • Complementary to 2SC2705. • Small Collector Output Capacitance: Cob = 2.5 pF (typ.) • High Transition Frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 2SA1023 Si pnp 250mW 70V - 5V 100mA 150>C 180MHz 4,5 200T NEC TO92-1 Low Power General Purpose BC556 2N3494 KT3108A 2SA781 2SA1024 Si pnp 400mW 400V 360V 5V 100mA 150>C 15MHz 4 30/200 NEC TO18 Low Power High Voltage General Purpose - - -
 

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Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to SMD Type Transistors PNP Transistors 2SA1013 1.70 0.1 Features High voltage Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current Silicon Epitaxial Planar Transistor 2SC1050 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 300 V Collector-emitter voltage (open base) VCEO - 250 V Collector current (DC 2SA1023 NTE Equvilent Transistor PNP Silicon 100v Ic=0.5a To-92 Case Audio Power Amp Compl To NTE289a . Data Sheet : NTE 2SA1023 datasheet, cross reference, circuit and application notes in pdf format. 2SA1023 datasheet & applicatoin notes - Datasheet Archive The Datasheet Archive 2SA1046 datasheet, cross reference, circuit and application notes in pdf format. Silicon Epitaxial Planar Transistor 2SC1050 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 300 V Collector-emitter voltage (open base) VCEO - 250 V Collector current (DC TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013. Color TV Verttical Deflection Output Applications Power Switching Applications. • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383.
 

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CDST-70-HF price list from transistorfet.com offers you the best CDST-70-HF photo,transistor and CDST-70-HF mosfet. TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013. Color TV Verttical Deflection Output Applications Power Switching Applications. • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383. TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS), 2SA1837 datasheet, 2SA1837 circuit, 2SA1837 data sheet : TOSHIBA, alldatasheet, datasheet, Datasheet search ... TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS), 2SA1837 datasheet, 2SA1837 circuit, 2SA1837 data sheet : TOSHIBA, alldatasheet, datasheet, Datasheet search ... Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −230 V Collector-emitter voltage VCEO −230 V Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to

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Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) Application : Audio and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –180 –180 –6 –15 –4 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Absolute maximum ratings Electrical Characteristics Typical Switching Characteristics (Common Emitter ... The 2SA1294 is a PNP transistor of −230 V, −15 A. The product has constant h FE characteristics in a wide current range, providing high-quality audio sounds. Features Complementary to 2SC3263 ( LAPT (Linear Amplifier Power Transistor) High Transition Frequency Bare Lead Frame: Pb-free (RoHS Compliant) V CEO