2sd2012 transistor datasheet

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Add To Cart to Calculate Shipping. D2012 NTE Equivalent NTE54 NPN audio power amplif... Qty On Hand: 1 Silicon NPN Power Transistors 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN DESCRIPTION 1Base 2 Collector 3 Emitter tetrafet d2010uk metal gate rf silicon fet mechanical data c n (typ) b 3 d (2 pls) 2 1 a f (2 pls) h j gold metallised multi-purpose silicon dmos rf fet 20w – 28v – 1ghz single ended features • simplified amplifier design m i e k g • suitable for broad band applications • low crss • simple bias circuits dp pin 1 pin 3 source gate pin 2 drain dim mm a 16.
 

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2SD2012: NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) STMicroelectronics: 2SD2012: NPN SILICON POWER TRANSISTOR: Toshiba Semiconductor: 2SD2012: Audio Frequency Power Amplifier Applications: Savantic, Inc. 2SD2012: Silicon NPN Power Transistors: 2SD2012: Silicon NPN Power Transistors: Jiangsu Changjiang Elec... 2SD2012: TO-220F Plastic-Encapsulate Transistors 2SD2012: NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) STMicroelectronics: 2SD2012: NPN SILICON POWER TRANSISTOR: Toshiba Semiconductor: 2SD2012: Audio Frequency Power Amplifier Applications: Savantic, Inc. 2SD2012: Silicon NPN Power Transistors: 2SD2012: Silicon NPN Power Transistors: Jiangsu Changjiang Elec... 2SD2012: TO-220F Plastic-Encapsulate Transistors Datasheets BC546B, 547A(B,C), 548B(C) Product Photos TO-92-3(StandardBody),TO-226_straightlead Standard Package 2,000 Category Discrete Semiconductor Products Family Transistors (BJT) - Single Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA DC ...
 

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2SD2012, 2SD2012 Datasheet, 2SD2012 NPN Audio Power Transistor Datasheet, buy 2SD2012 Transistor Description Silicon NPN Power Transistor Part Number 2SD2012 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. tetrafet d2010uk metal gate rf silicon fet mechanical data c n (typ) b 3 d (2 pls) 2 1 a f (2 pls) h j gold metallised multi-purpose silicon dmos rf fet 20w – 28v – 1ghz single ended features • simplified amplifier design m i e k g • suitable for broad band applications • low crss • simple bias circuits dp pin 1 pin 3 source gate pin 2 drain dim mm a 16.

May 14, 2015 · En este video les explico como Medir o Probar adecuadamente un Transistor NPN o PNP haciendo uso de un Multimetro Digital. Realizo mediciones sobre los transistores 2N3904, 2N3906, BD 136 y 2N3055 ... datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors.

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The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. ® INTERNAL SCHEMATIC DIAGRAM October 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (I E = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V