Fds9435a datasheet 2n3904

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2001 Fairchild Semiconductor Corporation FDS9435A Rev D1(W) FDS9435A 30V P-Channel PowerTrench Ò MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive 2N3904, 2N3904 Datasheet, 2N3904 NPN General Purpose Transistor Datasheet, buy 2N3904 Transistor 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted * Changjiang Electronics Tech (CJ) Changjiang Electronics Tech (CJ) 2N3904-TA US$0.02 LCSC electronic components online Transistors Transistors (NPN/PNP) leaded datasheet+inventory and pricing
 

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2N3904 General Purpose Transistors NPN TO-92 Page 1 12/05/08 V1.1 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4
 

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DS30036 Rev. E-2 1 of 2 MMBT3904 MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Characteristic Symbol MMBT3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V 2N3904 General Purpose Transistors NPN TO-92 Page 1 12/05/08 V1.1 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 2N2222 datasheet, 2N2222 pdf, 2N2222 data sheet, datasheet, data sheet, pdf

2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. kn3904 datasheet (pdf) 1.1. kn3904s.pdf size:71k _kec semiconductor kn3904s technical data epitaxial planar npn transistor general purpose application. switching application. e features l b l dim millimeters low leakage current _ + 2.93 0.20 a b 1.30+0.20/-0.15 : icex=50na(max.) ; @vce=30v, veb=3v. 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. Theyare designed for high speedsaturated switchingand generalpurposeapplication. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM ...

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2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack 1/5