Tip55a datasheet 7404

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DATA SHEET Document No. G15291EJ3V0DS00 (3rd edition) (Previous No. SC-1030) Date Published July 2006 NS CP(K) Printed in Japan 1985, 2006 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Ratings Units
 

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TIP42G Datasheet, TIP42G PDF, TIP42G Data sheet, TIP42G manual, TIP42G pdf, TIP42G, datenblatt, Electronics TIP42G, alldatasheet, free, datasheet, Datasheets, data ... NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Ratings Units TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS 1 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Designed for Complementary Use with the TIP34 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted ... TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) www.onsemi.com 3 Figure 1. Darlington Circuit Schematic BASE EMITTER COLLECTOR ≈ 8.0 k ≈ 120
 

Ms33649 spec sheet

All the part names for which the file 5071.pdf is a datasheet buz80a n - channel 800v - 2.5Ω - 3.8a - to-220 fast power mos transistor typicalrds(on) = 2.5 Ω ±30v gate to source voltagerating 100%avalanche tested repetitiveavalanche data at 100 oc low intrinsic capacitances gatecharge minimized reducedthreshold voltagespread applications high current, high speedswitching Absolute maximum ratings BD238 2/9 Doc ID 15786 Rev 1 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -100 V buz80a n - channel 800v - 2.5Ω - 3.8a - to-220 fast power mos transistor typicalrds(on) = 2.5 Ω ±30v gate to source voltagerating 100%avalanche tested repetitiveavalanche data at 100 oc low intrinsic capacitances gatecharge minimized reducedthreshold voltagespread applications high current, high speedswitching

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The device provides convenient and efficient operation with input voltages from 4.5 V to 28 V and output voltage from 0.77 V to 7 V. The TPS53015 is available in the 3-mm × 3-mm 10- pin VSSOP (DGS) package and is specified for an ambient temperature range of –40°C to 85°C. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only. N-P-N SILICON POWER TRANSISTORS, TIP55A datasheet, TIP55A circuit, TIP55A data sheet : TI, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors.