J 135 datasheet

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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code V DS R DS(on) max I D STW26NM60N 600 V 0.165 Ω 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications J 0 8;*+ Product data sheet Rev. 6 — 24 September 2014 2 of 21 Nexperia BAS16 series High-speed switching diodes 1.4 Quick reference data Table 2. Quick reference data 2. Pinning information Table 3. Pinning [1] The marking bar indicates the cathode. Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode
 

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• 48-pin TQFP, VQFN • 32-pin TQFP, VQFN General • Drop in compatible with SAM D20 and SAM D21 (see Note) Note: Only applicable for 32-pin, 48-pin, and 64-pin TQFP and VQFN packages.
 

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Forward Voltage VF 135 200 280 350 530 240 320 400 500 1000 mV mV mV mV mV IF=0.1mA IF=1mA ... BAT54S Silicon epitaxial Schottky barrier diode datasheet Author ... Semiconductor Group 1 09.96 Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1234 BSP 135 Q62702-S655 E6327: 1000 pcs/reel G D S D BSP 135 SOT-223 LM35 +V S R1 V OUT tV S LM35 +V S (4 V to 20 V) OUTPUT 0 mV + 10.0 mV/°C Product Folder Order Now Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, BTS441RG Data sheet 6 Rev. 1.21, 2012-12-06 Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD135/137/139 1 TO-126 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Operating and Storage Temperature Range TJ, TSTG-65 to +150 °C Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol US1A US1B US1D US1G US1J US1K US1M Unit Forward Voltage Drop @ IF = 1.0A VFM 1.0 1.3 1.7 V SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv/dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A =25 ... LUXEON TX is designed to deliver high efficacy with high flux density to enable tight beam control in directional and high lumen applications. With Freedom from Binning and leading performance, LUXEON TX

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Range K –40 to 135 ºC Maximum Junction Temperature T J (max) 150 ºC Storage Temperature T stg –55 to 150 ºC ESD Rating, Human Body Model AEC-Q100-002, all pins 2000 V ESD Rating, Charged Device Model AEC-Q100-011, all pins 1050 V THERMAL CHARACTERISTICS Characteristic Symbol Test Conditions* Value Units Package Thermal Resistance R θJA j. ‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm, T A = 25OC. Product Marking TO-243AA (SOT-89) TO-92 TO-220 Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSX Drain-to-source breakdown voltage 400 - - V V GS = -5.0V, I D = 100µA V GS(OFF) Gate-to-source off voltage -1.5 - -3.5 ...