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2N3904 datasheet, 2N3904 pdf, 2N3904 data sheet, datasheet, data sheet, pdf NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ... Rev. C/CZ MMBT3904 SMD General Purpose Transistor (NPN) www.taitroncomponents.com Page 3 of 9 Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1
 

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2N3391 Datasheet (PDF) 1.1. 2n3390 2n3391 2n3391a 2n3392 2n3393.pdf Size:296K _fairchild_semi. Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.
 

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NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. DS30036 Rev. E-2 1 of 2 MMBT3904 MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Characteristic Symbol MMBT3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V DS30036 Rev. E-2 1 of 2 MMBT3904 MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Characteristic Symbol MMBT3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V

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NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904!Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906.!Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT3904 UMT3 R1A T106 3000 SST3904 SST3 T116 3000 MMST3904 SMT3 T146 ... 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1