Note 2n2222a datasheet st

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Datasheet -production data Figure 1. Internal schematic diagramI Features • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose ratee Description The 2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN ...Order today, ships today. 2N2222A – Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 500mW Through Hole TO-18 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics. Datasheet -production data Figure 1. Internal schematic diagramI Features • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose ratee Description The 2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN ...
 

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P2N2222A Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc P2N2222A Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdcNXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. Current−Gain − Bandwidth Product (Note 2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C fT 300 − ...Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates.
 

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2N2222A Datasheet : HIGH SPEED SWITCHES / 2N2222 datasheet, 2N2222A PDF Download STMicroelectronics, 2N2222A Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic ... General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage PN2222 PN2222A VCEO 30 40 Vdc Collector-Base Voltage PN2222 PN2222A VCBO 60 75 Vdc Emitter-Base Voltage PN2222 PN2222A VEBO 5.0 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C ...

2N2222A Central Semiconductor Bipolar Transistors - BJT NPN Gen Pur SS datasheet, inventory, & pricing.Order today, ships today. 2N2222A – Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 500mW Through Hole TO-18 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics. 2n2222a die a microsemi company 580 pleasant st. phone: 617-924-9280 watertown, ma 02172 fax: 617-924-1235 die specification switching transistor npn silicon features: n electrical performance i.a.w. mil-prf-19500/255 n available in wafer or chip form for hybrid applications n general purpose-high speed switching applications n

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Current−Gain − Bandwidth Product (Note 2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C fT 300 − ...The 2N2222A is a Silicon NPN Transistor with 50V collector emitter voltage and 800mA continuous collector current. The silicon NPN transistor is designed for use with small signal general purpose amplifier and switch.General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage PN2222 PN2222A VCEO 30 40 Vdc Collector-Base Voltage PN2222 PN2222A VCBO 60 75 Vdc Emitter-Base Voltage PN2222 PN2222A VEBO 5.0 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C ...