Aho48 transistor datasheet

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2N2905A Small Signal Switching Transistor PNP Silicon Features • MIL−PRF−19500/290 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −60 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc Advanced IGBT/MOSFET driver, TD350E datasheet, TD350E circuit, TD350E data sheet : STMICROELECTRONICS, alldatasheet, datasheet, Datasheet search site for Electronic ... All Transistors Datasheet. Cross Reference Search. Transistor Database.
 

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2N5484 MOSFET. Datasheet pdf. Equivalent. Type Designator: 2N5484 Type of Transistor: JFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 0.35 W Maximum Drain-Source Voltage |Vds|: 25 V Maximum Gate-Source Voltage |Vgs|: 25 V Maximum Drain Current |Id|: 0.005 A Maximum Junction Temperature... DATA SHEET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 17 DISCRETE SEMICONDUCTORS 2N1893 NPN medium power transistor book, halfpage M3D111 a8j (139) bias resistor transistor, npn silicon surface mount transistor with monolithic bias resistor network a8k (18) bias resistor transistor, npn silicon surface mount transistor with monolithic bias resistor network a8l (30) 8-bit avr with 8k bytes in-system programmable flash a8m (5) technical specifications of silicon rectifier GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. ® INTERNAL SCHEMATIC DIAGRAM December 2002
 

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BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS 1 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Designed for Complementary Use with the BD242 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available

Aug 14, 2016 · On this datasheet of PN2222A bipolar transistor it is said that Vcesat at Ic/Ib=10 is about 0,3volts. However in the Icollector vs Vcesat graph for the same transistor that I will be posting immediately after I post this thread cause I cant add one more image here, it is shown that Vce hardly even exceeds 0,2 volts at 500mAmps. 2N3907 Datasheet, 2N3907 PDF, 2N3907 Data sheet, 2N3907 manual, 2N3907 pdf, 2N3907, datenblatt, Electronics 2N3907, alldatasheet, free, datasheet, Datasheets, data ...

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