Xc2361a datasheet 2n3904

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This circuit is under:, oscillators, rf, rf oscillator circuit 2n3904 l6324 This basic RF oscillator circuit is easy to build and the components are not critical. Most of them can be found in your junk parts box. The L1 antenna col can be made by close winding 8 to 10 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack 1/5 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack 1/5 2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
 

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At 20mA, that's about 120 Ohms. The current gain depends on the collector current, but figure on 50. With a base current of 20mA, that's a collector current of way more than the 2N3904 can handle, so 20mA will saturate it thoroughly. You can probably get by with a lower base current. Look at a 2N3904 datasheet for gain at different collector ... 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 — Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 140mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF — 5 dB Delay Time (see Fig. 1)
 

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2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. kn3904 datasheet (pdf) 1.1. kn3904s.pdf size:71k _kec semiconductor kn3904s technical data epitaxial planar npn transistor general purpose application. switching application. e features l b l dim millimeters low leakage current _ + 2.93 0.20 a b 1.30+0.20/-0.15 : icex=50na(max.) ; @vce=30v, veb=3v.

2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 1/37 XC6223 Series Built-in Inrush Current Protection, 300mA High Speed LDO Voltage Regulator The CE function enables the circuit to be in stand-by mode by XC2361E, XC2367E XC2000 Family Derivatives / Premium Line Summary of Features Data Sheet 8 V1.3, 2014-06 – Multi-functional general purpose timer unit with 5 timers – 16-channel general purpose capture/compare unit (CAPCOM2) – Up to four capture/compare units for flexible PWM signal generation (CCU6x) 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1

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